Hybrid power semiconductor switch

Details Hybrid power semiconductor switch Hybrid power semiconductor switch

1983-09-30

1985-10-15

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307264, 307270, 307566, 307572, H03K 1708, H03K 1710

Patent

active

045476861

ABSTRACT:
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conduction, rendering one power electrode of the bipolar transistor open. Means provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.

REFERENCES:
patent: 3631528 (1971-12-01), Green
patent: 3963946 (1976-06-01), Zajac
patent: 4303841 (1981-12-01), Baker
patent: 4356416 (1982-10-01), Weischedel
patent: 4360744 (1982-11-01), Taylor
patent: 4480201 (1984-10-01), Jaeschke

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