Hybrid polysilicon/amorphous silicon TFT and method of fabricati

Details Hybrid polysilicon/amorphous silicon TFT and method of fabricati Hybrid polysilicon/amorphous silicon TFT and method of fabricati

1998-05-21

1999-01-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257 72, 257 75, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

058641505

ABSTRACT:
The present invention discloses a hybrid polysilicon/amorphous silicon TFT device for switching a LCD and a method for fabrication wherein a n.sup.+ doped amorphous silicon layer is advantageously used as a mask during a laser annealing process such that only a selected portion of a hydrogenated amorphous silicon layer is converted to a crystalline structure while other portions retain their amorphous structure. As a result, a polysilicon TFT and at least one amorphous silicon TFT are formed in the same structure and the benefits of both a polysilicon TFT and amorphous silicon TFT such as a high charge current and a low leakage current are retained in the hybrid structure.

REFERENCES:
patent: 5614729 (1997-03-01), Ukai et al.

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