Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1999-06-25
2000-10-24
Williams, Alexander O.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257728, 257725, 257724, 257723, 257691, 257666, 257426, 257444, 257500, 257355, 257226, 257204, H03K 1901, H03K 1704
Patent
active
061371653
ABSTRACT:
A power MOSFET die and a logic and protection circuit die are mounted on a common lead frame pad, such as a TO220 lead frame pad. The logic and protection circuit die includes a MOSFET that is connected in parallel with the power MOSFET but which is smaller than the power MOSFET and which dissipates power at a predetermined fraction of that of the power MOSFET. The logic and protection circuit die also includes a temperature sensor that is in close proximity to the MOSFET and determines the temperature of the MOSFET. The die also includes another temperature sensor that is located distant from the MOSFET to determine the temperature of the lead frame. The temperature of the power MOSFET can be determined from the temperature measured by these two sensors and from the ratio of the power dissipated by the two MOSFETs.
REFERENCES:
patent: 4645951 (1987-02-01), Uragami
patent: 4983862 (1991-01-01), Suzuki et al.
patent: 5072195 (1991-12-01), Graham et al.
patent: 5226011 (1993-07-01), Yanagisawa
patent: 5245222 (1993-09-01), Suzuki et al.
International Rectifier Corp.
Williams Alexander O.
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