Hybrid orientation substrates by in-place bonding and...

Details Hybrid orientation substrates by in-place bonding and... Hybrid orientation substrates by in-place bonding and...

2006-06-13

2006-06-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S407000

Reexamination Certificate

active

07060585

ABSTRACT:
A method utilizing in-place bonding and amorphization/templated recrystallization (ATR) is provided for making bulk and semiconductor-on-insulator substrates having coplanar semiconductor layers of different crystallographic orientations. First and second semiconductor layers having different orientations are bonded to opposite sides of a sacrificial spacer layer. Selected areas in one of the semiconductor layers are amorphized; in-place bonding is then performed in a wet etch solution to remove the sacrificial layer and leave the semiconductor layers bonded to each other. The amorphized regions are recrystallized across the bonded interface, using the semiconductor on the non-amorphized side of the bonded interface as a template.

REFERENCES:
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patent: 4757030 (1988-07-01), Galvin et al.
patent: 4853342 (1989-08-01), Taka et al.
patent: 5266504 (1993-11-01), Blouse et al.

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