Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-01-04
2011-01-04
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S618000, C257S628000, C257S347000, C257S351000, C257SE29003, C257SE29004
Reexamination Certificate
active
07863712
ABSTRACT:
The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which the in-plane <110> direction of the (011) DSB layer is aligned with an in-plane <110> direction of the (001) base substrate. Selected regions of the DSB layer are amorphized down to the base substrate to form amorphized regions aligned with the mutually orthogonal in-plane <100> directions of the (001) base substrate, followed by recrystallization using the base substrate as a template. This optimal arrangement of DSB layer, base substrate, and amorphized region orientation provides a near-vertical, essentially defect-free boundary between original-orientation and changed-orientation silicon regions, thus enabling complete boundary region removal with smaller footprint shallow trench isolation than possible with ATR methods not so optimized.
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Ott John A.
Saenger Katherine L.
Sung Chun-yung
Yin Haizhou
International Business Machines - Corporation
Kim Jay C
Parker Kenneth A
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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