Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1998-02-24
2000-07-25
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 98, 257432, 257433, 385 92, 385 94, H01L 3300
Patent
active
060939397
ABSTRACT:
A hybrid optical device includes a passive component coupled optically to an active component, the passive component being formed in layers of silica on a substrate made of silica, the layers and the substrate thus forming a silica-on-silica structure. The hybrid optical device includes an intermediate element having good thermal conductivity and a coefficient of thermal expansion similar to that of the active component, wherein the active component is fixed to the intermediate element prior to insertion into the cavity, and the intermediate element is fixed to the structure so that the active component is located inside the cavity and is coupled optically to the passive component.
REFERENCES:
I. Kitazawa et al, "Thermal Resistance and Soldering Stress Analyses on LD-Mount-Structures for Planar Lightwave Circuits", IOOC '95, 1995, pp. 28-29.
D. Peters et al, "Integrated Optical Devices with Silicon Oxynitride Prepared by PECVD on Si and GaAs Substrates", SPIE, Physical Concepts of Materials for Novel Optoelectronics Device Applications II: Device Physics and Applications, vol. 1362, Oct. 28, 1990-Nov. 2, 1990, AACHEN, pp. 338-349.
Artigue Claude
Grard Emmanuel
Mallecot Franck
Tregoat Denis
Alcatel
Tran Minh Loan
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