Static information storage and retrieval – Floating gate
Reexamination Certificate
2007-08-14
2007-08-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
C365S185080, C365S185110, C365S189011
Reexamination Certificate
active
11201247
ABSTRACT:
The present invention discloses a memory device that includes a first memory cell array for storing one or more codes; a second memory cell array for storing one or more data, which are updated substantially more frequently than the codes; and a third memory cell array for storing address mapping information that indicates one or more locations of one or more memory cells in the second memory cell array. The second memory cell array endures substantially more programming cycles than the first memory cell array does.
REFERENCES:
patent: H1915 (2000-11-01), Boone et al.
patent: 2005/0251617 (2005-11-01), Sinclair et al.
patent: 2006/0023550 (2006-02-01), Pesavento
Chih Yue-Der
Wang Chin-Huang
Kirkpatrick & Lockhart Preston Gates & Ellis LLP
Le Toan
Phung Anh
Taiwan Semiconductor Manufacturing Co.
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