Hybrid non-volatile memory device

Static information storage and retrieval – Floating gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185080, C365S185110, C365S189011

Reexamination Certificate

active

11201247

ABSTRACT:
The present invention discloses a memory device that includes a first memory cell array for storing one or more codes; a second memory cell array for storing one or more data, which are updated substantially more frequently than the codes; and a third memory cell array for storing address mapping information that indicates one or more locations of one or more memory cells in the second memory cell array. The second memory cell array endures substantially more programming cycles than the first memory cell array does.

REFERENCES:
patent: H1915 (2000-11-01), Boone et al.
patent: 2005/0251617 (2005-11-01), Sinclair et al.
patent: 2006/0023550 (2006-02-01), Pesavento

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hybrid non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hybrid non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid non-volatile memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3862379

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.