Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2011-08-23
2011-08-23
Huff, Mark F (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S394000
Reexamination Certificate
active
08003281
ABSTRACT:
A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.
REFERENCES:
patent: 4849313 (1989-07-01), Chapman et al.
patent: 5995200 (1999-11-01), Pierrat
patent: 6710851 (2004-03-01), Elmer et al.
patent: 6737205 (2004-05-01), Maltabes et al.
patent: 2005/0095509 (2005-05-01), Zhang et al.
Chinese Patent Office, Office Action dated Oct. 14, 2010, Application No. 200910166148.1, 4 pages.
Liang Che-Rong
Lin Feng-Lung
Tsai Fei-Gwo
Wu Kuan-Liang
Fraser Stewart A
Haynes and Boone LLP
Huff Mark F
Taiwan Semiconductor Manufacturing Company Ltd
LandOfFree
Hybrid multi-layer mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid multi-layer mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid multi-layer mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2699504