Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-09-19
2006-09-19
Nguyen, Hoang V. (Department: 2821)
Coherent light generators
Particular active media
Semiconductor
C372S099000
Reexamination Certificate
active
07110427
ABSTRACT:
The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.
REFERENCES:
patent: 5574738 (1996-11-01), Morgan
patent: 5745515 (1998-04-01), Marta et al.
patent: 5864575 (1999-01-01), Ohiso et al.
patent: 6798806 (2004-09-01), Johnson et al.
Johnson Ralph H.
Wang Tzu-Yu
Al-Nazer Leith A.
Finisar Corporation
Nguyen Hoang V.
Workman Nydegger
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