Hybrid microwave integrated circuit

Details Hybrid microwave integrated circuit Hybrid microwave integrated circuit

2008-06-24

2008-06-24

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S275000, C257S277000, C257S712000, C257S713000, C257S720000

Reexamination Certificate

active

07391067

ABSTRACT:
An integrated microwave transistor amplifier includes a AlGaN/GaN active transistor arrangement on a thinned Si 1-mil heat spreader. Elongated, plated-through vias extend from the source portions of the transistor arrangement through the spreader to a thick gold supporting layer. A matching circuit is defined on a four-mil GaAs substrate, also with a thick gold support layer. A stepped heat sink supports the matching circuit and the active transistor with surfaces coplanar. Bond wires interconnect the matching circuit with the gate or drain connections of the transistor.

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Hanson et al; Development of a GaN Transistor Process for Linear Power Applications, Nitronex Corp, Raleigh NC.
Julio Perdermo, Designing at the System Level: What Will Your Power Amplifier do in the Chip Set?, Seminar: Gaim Without Pain, Nov. 2000, Agilent Technologies.

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