Hybrid method of making an amorphous silicon P-I-N semiconductor

Details Hybrid method of making an amorphous silicon P-I-N semiconductor Hybrid method of making an amorphous silicon P-I-N semiconductor

1981-10-15

1983-10-04

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

136258, 204192P, 357 2, 357 30, 427 39, 427 74, 427 86, C23C 1500, H01L 3118

Patent

active

044077106

ABSTRACT:
The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4339470 (1982-07-01), Carlson
patent: 4342044 (1982-07-01), Ovshinsky et al.
"Factors Influencing the Efficiency of Amorphous Silicon Solar Cells," Journal of Non-Crystalline Solids, 35-36 (1980), pp. 707-717.

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