Hybrid integrated circuit device with high melting point...

Details Hybrid integrated circuit device with high melting point... Hybrid integrated circuit device with high melting point...

2007-04-03

2007-04-03

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S724000

Reexamination Certificate

active

10813189

ABSTRACT:
In order to prevent short-circuiting when a chip component is brazed to pads of a conductive wiring layer, a hybrid semiconductor circuit includes the chip component with terminal electrodes formed at both ends, a first conductive wiring layer on which the pads are provided such that they correspond to the terminal electrodes, and an overcoat resin that covers the first conductive wiring layer excluding the pads. The terminal electrodes of the chip component are adhered to the pads by a conductive adhesive and an insulating adhesive is provided between the pads.

REFERENCES:
patent: 6889431 (2005-05-01), Okabe et al.
patent: 2003-007921 (2003-01-01), None
patent: 2002-96985 (2002-12-01), None

Affiliated with

Also associated with

Rating

Hybrid integrated circuit device with high melting point... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hybrid integrated circuit device with high melting point..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid integrated circuit device with high melting point... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3790234