Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-03-08
2011-03-08
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S203000, C257S207000, C257S208000, C257S341000, C257S342000, C257S401000, C257S690000, C257S698000, C257S700000, C257S774000, C257SE21575, C257SE21576, C257SE21577, C257SE21582
Reexamination Certificate
active
07902656
ABSTRACT:
A hybrid integrated circuit device having high mount reliability comprises a module substrate which is a ceramic wiring substrate, a plurality of electronic component parts laid out on the main surface of the module substrate, a plurality of electrode terminals laid out on the rear surface of the module substrate, and a cap which is fixed to the module substrate to cover the main surface of the module substrate. The electrode terminals include a plurality of electrode terminals which are aligned along the edges of the module substrate and power voltage supply terminals which are located inner than these electrode terminals. The electrode terminals aligned along the substrate edges are coated, at least in their portions close to the substrate edge, with a protection film having a thickness of several tens micrometers or less. Connection reinforcing terminals consist of a plurality of divided terminals which are independent of each other, and are ground terminals.
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Moriyama Shinji
Yamada Tomio
Mattingly & Malur, P.C.
Renesas Electronics Corporation
Soward Ida M
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