Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-10-18
2005-10-18
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S710000, C257S723000, C257S787000, C438S048000, C438S107000, C438S112000
Reexamination Certificate
active
06956252
ABSTRACT:
In preferred embodiments, a compact a hybrid integrated circuit device1can be provided. A conductive pattern12is formed on the top surface of a circuit substrate10, on the top surface of which an insulating layer11has been provided. Conductive pattern12is formed over the entirety of the top surface of the circuit substrate. Specifically, conductive pattern12is also formed at parts within2mm from the peripheral ends of circuit substrate10. Also, a heat sink13A or other circuit element13with some height can be positioned near a peripheral end part of circuit substrate10. By arranging hybrid integrated circuit device1, the degree of integration of hybrid integrated circuit is improved. Thus, in a case where the same circuit as a prior-art example is formed, the size of the entire hybrid integrated circuit device can be made small.
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Mizutani Masahiko
Motegi Kazutoshi
Nezu Motoichi
Takakusaki Sadamichi
Huynh Andy
Sanyo Electric Co,. Ltd.
Watchstone P&D
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