Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1986-03-20
1987-08-18
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
046879404
ABSTRACT:
An ion beam microfabrication system is described which is capable of operating in either a flooded beam mode, in which a relatively high current beam is used to yield a rapid throughput, or in a low current, high resolution focused ion beam mode. With a focused beam a small, relatively low current ion spot is deflected in a predetermined pattern over a portion of the wafer to produce more detailed patterning that is not achievable in the flooded beam mode. A lens is added to the beam column to modify the beam collimation between the focused and flooded modes, and switching between modes is accomplished by simply actuating or de-actuating the lens. The beam is formed with a larger acceptance angle and total current in the flooded than the focused mode.
REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 4263514 (1981-04-01), Reeds
Bartelt John L.
McKenna Charles M.
Seliger Robert L.
Ward J. William
Anderson Bruce C.
Berman Jack I.
Denson-Low Wanda K.
Hughes Aircraft Company
Karambelas A. W.
LandOfFree
Hybrid focused-flood ion beam system and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid focused-flood ion beam system and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid focused-flood ion beam system and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1119509