Hybrid FET incorporating a finFET and a planar FET

Details Hybrid FET incorporating a finFET and a planar FET Hybrid FET incorporating a finFET and a planar FET

2008-05-28

2010-11-23

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S265000, C257S329000, C257SE21676, C257SE21693, C438S173000, C438S192000

Reexamination Certificate

active

07838913

ABSTRACT:
A stack of a vertical fin and a planar semiconductor portion are formed on a buried insulator layer of a semiconductor-on-insulator substrate. A hybrid field effect transistor (FET) is formed which incorporates a finFET located on the vertical fin and a planar FET located on the planar semiconductor portion. The planar FET enables a continuous spectrum of on-current. The surfaces of the vertical fin and the planar semiconductor portion may be set to coincide with crystallographic orientations. Further, different crystallographic orientations may be selected for the surfaces of the vertical fin and the surfaces of the planar semiconductor portion to tailor the characteristics of the hybrid FET.

REFERENCES:
patent: 6943407 (2005-09-01), Ouyang et al.
patent: 7060539 (2006-06-01), Chidambarrao et al.
patent: 7091566 (2006-08-01), Zhu et al.
patent: 2005/0263831 (2005-12-01), Doris et al.
patent: 2007/0102756 (2007-05-01), Lojek
patent: 2007/0134864 (2007-06-01), Anderson et al.

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