Hybrid FET incorporating a finFET and a planar FET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S265000, C257S329000, C257SE21676, C257SE21693, C438S173000, C438S192000

Reexamination Certificate

active

07838913

ABSTRACT:
A stack of a vertical fin and a planar semiconductor portion are formed on a buried insulator layer of a semiconductor-on-insulator substrate. A hybrid field effect transistor (FET) is formed which incorporates a finFET located on the vertical fin and a planar FET located on the planar semiconductor portion. The planar FET enables a continuous spectrum of on-current. The surfaces of the vertical fin and the planar semiconductor portion may be set to coincide with crystallographic orientations. Further, different crystallographic orientations may be selected for the surfaces of the vertical fin and the surfaces of the planar semiconductor portion to tailor the characteristics of the hybrid FET.

REFERENCES:
patent: 6943407 (2005-09-01), Ouyang et al.
patent: 7060539 (2006-06-01), Chidambarrao et al.
patent: 7091566 (2006-08-01), Zhu et al.
patent: 2005/0263831 (2005-12-01), Doris et al.
patent: 2007/0102756 (2007-05-01), Lojek
patent: 2007/0134864 (2007-06-01), Anderson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Hybrid FET incorporating a finFET and a planar FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hybrid FET incorporating a finFET and a planar FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid FET incorporating a finFET and a planar FET will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4163525

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.