Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-08-01
2006-08-01
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257S075000, C324S249000, C360S324100
Reexamination Certificate
active
07084468
ABSTRACT:
Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.
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International Search Report dated Dec. 13, 2004.
Chang Joon Yeon
Han Suk Hee
Hwang Woong Jun
Kim Hi Jung
Kim Young Keun
Dickey Thomas L.
Korea Institute of Science and Technology
Ostrolenk Faber Gerb & Soffen, LLP
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