Hybrid epitaxial growth process

Details Hybrid epitaxial growth process Hybrid epitaxial growth process

1984-11-02

1986-05-20

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 148175, H01L 21363

Patent

active

045891923

ABSTRACT:
A method of making infrared detectors on a substrate of mercury cadmium turide (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.

REFERENCES:
patent: 3496024 (1970-02-01), Ruehrwein
patent: 3858074 (1974-12-01), Fukai et al.
patent: 3884788 (1975-05-01), Maciolek et al.
patent: 3915765 (1975-10-01), Cho et al.
patent: 3969164 (1976-07-01), Cho et al.
patent: 4116725 (1978-09-01), Shimizu
patent: 4318217 (1982-03-01), Jenner et al.
patent: 4376663 (1983-03-01), Wang et al.
patent: 4435224 (1984-03-01), Durand
patent: 4439266 (1984-03-01), Gentile et al.
patent: 4445965 (1984-05-01), Milnes
patent: 4517047 (1985-05-01), Chang et al.

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