Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1981-05-22
1983-11-15
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 56, 333116, 333247, H03F 360
Patent
active
044158670
ABSTRACT:
A microstrip integrated circuit reflection amplifier utilizing packaged diodes and permitting some gain and bandwidth adjustment. A 3 db quadrature coupler has two of its ports connected to substantially identical reflection amplifiers. The reflection diodes are adjustably mounted in brackets perpendicular to the dielectric substrate of the microstrip network and may be moved in and out along the microstrip circuit to provide for some gain correction and bandwidth adjustment.
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Entschladen et al., "Microstrip Transferred Electron Amplifier for X-Band equencies", Nachrichtentechnische Zeitschrift NTZ, vol. 29, No. 4, pp. 330-332, Apr. 1976.
Rubin, "Varactor-Tuned Millimeter-Wave MIC Oscillator", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 11, Nov. 1976, pp. 866,867.
Beers Robert F.
Fendelman Harvey
Johnston Ervin F.
Mullins James B.
The United States of America as represented by the Secretary of
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