Hybrid component for very high frequency amplification

Details Hybrid component for very high frequency amplification Hybrid component for very high frequency amplification

1979-05-02

1981-05-12

Dixon, Harold A.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330302, H03F 360

Patent

active

042675200

ABSTRACT:
A component of the "hybrid-circuit" type comprising an active component, such as a very-high-frequency field-effect transistor, and a sealed housing, intended for operating as an amplifier in a large frequency band, in the range from 1 to 20 Gc/s. In this hybrid component, are accomodated in the same housing, by using in particular the ceramic elements of the base situated on the periphery of an earth return aperture containing the active component, metallizations forming lines having distributed constants. Moreover, to obtain a low standing-wave ratio on these lines, lumped circuit elements are placed inside the housing in the closest vicinity of the active component.

REFERENCES:
patent: 3384832 (1968-05-01), Mayeur
patent: 3428911 (1969-02-01), Hambleton
patent: 3710272 (1973-01-01), Ayaki
patent: 4004256 (1977-01-01), Duncan
"Design Technique . . . Transistor", by Hewitt et al., The Radio & Electrical Engineer, vol. 46, No. 10, pp. 463-471, 10-76.

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