Hybrid CCD imaging

Radiant energy – Infrared-to-visible imaging – Including detector array

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2503384, 25037008, 25037013, H01L 27148

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active

054499089

ABSTRACT:
A hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, correlated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g A1 17).

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