Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2006-01-13
2009-10-06
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S288000, C257S618000, C257S903000, C257SE27098, C257SE21661, C365S049110, C365S154000, C365S156000, C365S174000, C365S181000, C365S182000, C438S142000, C438S197000, C438S478000
Reexamination Certificate
active
07598544
ABSTRACT:
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
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Bertin Claude L.
Guo Frank
Konsek Steven L.
Meinhold Mitchell
Rueckes Thomas
Ho Hoang-Quan T
Huynh Andy
Nanotero, Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
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