Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and...

Details Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and... Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and...

2009-09-29

2010-12-21

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S288000, C257SE27098, C257SE21661, C257S024000, C438S197000, C977S762000, C977S938000

Reexamination Certificate

active

07855403

ABSTRACT:
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.

REFERENCES:
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0245577 (2004-12-01), Bhattacharyya
patent: 2005/0073060 (2005-04-01), Datta et al.
Bachtold et al. Logic Circuits with Carbon Nanotube Transistors, Science, 294, Nov. 9, 2001, p. 1317.

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