Hybrid active and electronic circuit with evanescent coupling

Details Hybrid active and electronic circuit with evanescent coupling Hybrid active and electronic circuit with evanescent coupling

2005-11-08

2005-11-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S081000, C257S083000, C257S084000, C385S014000, C385S031000, C385S039000

Reexamination Certificate

active

06963118

ABSTRACT:
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

REFERENCES:
patent: 3617109 (1971-11-01), Tien
patent: 5502779 (1996-03-01), Magel
patent: 5987196 (1999-11-01), Noble

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