Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2008-11-05
2010-11-30
Nguyen, Long (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S337000
Reexamination Certificate
active
07843251
ABSTRACT:
An integrated circuit for a charge pump with a charge stage and a pump stage and a single High-Voltage PMOS (HVPMOS) transistor as the main switch for each stage and two times two minimum HVPMOS transistors in series as a bulk switch with fixed bulk connections, where the minimum HVPMOS transistors are smaller sized transistors than the transistors of the main switch. The bulk of the main switch is switched synchronously to the voltage node of the HVPMOS transistor of the main switch to force the bulk voltage (VB) to be equal or larger than either the source voltage (VS) or the drain voltage (VD). Two non-overlapping clock signals are used to trigger the HVPMOS transistors of the charge and pump stage.
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“A New Charge Pump Without Degradation in Threshold Voltage Due to Body Effect,” by Shin et al., IEEE Journal of Solid-State Circuits, vol. 35, No. 8, Aug. 2000, pp. 1227-1230.
Ackerman Stephen B.
Chen Sibin
Dialog Semiconductor GmbH
Nguyen Long
Saile Ackerman LLC
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