HVNMOS/HVPMOS switched capacitor charge pump having ideal...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S337000

Reexamination Certificate

active

07843251

ABSTRACT:
An integrated circuit for a charge pump with a charge stage and a pump stage and a single High-Voltage PMOS (HVPMOS) transistor as the main switch for each stage and two times two minimum HVPMOS transistors in series as a bulk switch with fixed bulk connections, where the minimum HVPMOS transistors are smaller sized transistors than the transistors of the main switch. The bulk of the main switch is switched synchronously to the voltage node of the HVPMOS transistor of the main switch to force the bulk voltage (VB) to be equal or larger than either the source voltage (VS) or the drain voltage (VD). Two non-overlapping clock signals are used to trigger the HVPMOS transistors of the charge and pump stage.

REFERENCES:
patent: 6400211 (2002-06-01), Yokomizo et al.
patent: 6831499 (2004-12-01), Oddone et al.
patent: 6888400 (2005-05-01), Lin et al.
patent: 6965263 (2005-11-01), Bringivijayaraghavan
patent: 6977533 (2005-12-01), Kernhof et al.
patent: 6995995 (2006-02-01), Zeng et al.
patent: 7123077 (2006-10-01), Chiu et al.
patent: 7224206 (2007-05-01), Pappalardo et al.
patent: 7236002 (2007-06-01), Salzmann et al.
patent: 7276960 (2007-10-01), Peschke
patent: 2005/0088220 (2005-04-01), Hahn et al.
patent: 2006/0006925 (2006-01-01), Yamazoe et al.
patent: 08392013.2 - 1242 (2009-02-01), None
patent: 1 881 589 (2008-01-01), None
patent: 2759507 (1998-08-01), None
“A New Charge Pump Without Degradation in Threshold Voltage Due to Body Effect,” by Shin et al., IEEE Journal of Solid-State Circuits, vol. 35, No. 8, Aug. 2000, pp. 1227-1230.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

HVNMOS/HVPMOS switched capacitor charge pump having ideal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HVNMOS/HVPMOS switched capacitor charge pump having ideal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HVNMOS/HVPMOS switched capacitor charge pump having ideal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4244552

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.