Chemistry: electrical and wave energy – Processes and products
Patent
1979-02-21
1981-06-30
Gantz, Delbert E.
Chemistry: electrical and wave energy
Processes and products
204 37R, 73335, 29570, H01G 905
Patent
active
042761280
ABSTRACT:
A device comprising a dielectric oxide film formed by anodization of a surface region of a valve metal body, a semiconductive metal oxide layer porously formed on the dielectric oxide film, and a gas permeable electrode layer formed on the semiconductive metal oxide layer with the interposal of a gas permeable carbon layer therebetween. The semiconductive metal oxide layer is formed by pyrolysis of a metal salt solution so as to be, microscopically, only partially in contact with the dielectric oxide film. After forming of the electrode layer, the device is immersed in boiling water and/or kept in a high temperature high humidity atmosphere for an adequate amount of time to stabilize the semiconductive metal oxide layer, resulting in that the semiconductive metal oxide layer has a multiplicity of microscopic crevices and that the device becomes quite stable in the relation between humidity and electrostatic capacitance of the device.
REFERENCES:
patent: 3376481 (1968-04-01), Klerer
patent: 3987676 (1976-10-01), Bennewitz
patent: 4038159 (1977-07-01), Nishino et al.
Nishino Atsushi
Ogino Nobukuni
Yoshida Akihiko
Gantz Delbert E.
Leader William
Matsushita Electric - Industrial Co., Ltd.
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