HR-CVD process for the formation of a functional deposited film

Details HR-CVD process for the formation of a functional deposited film HR-CVD process for the formation of a functional deposited film

1989-03-01

1990-11-20

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 451, 118723, 430 84, B05D 512

Patent

active

049718320

ABSTRACT:
An improved process for forming a functional deposited film by HR-CVD method which comprises disposing an electroconductive substrate or an insulating substrate at least one surface of which being applied with electroconductive treatment on a substrate holder in a substantially enclosed film-forming chamber, introducing a precursor formed in an activation chamber disposed separately from the film-forming chamber which is capable of contributing to the formation of the deposited film and an active species formed in another activation chamber disposed separately from the film-forming chamber and the activation chamber which is capable of chemically reacting with the precursor respectively and separately into said film-forming chamber, and chemically reacting them to thereby form a functional deposited film on the substrate, wherein a voltage in the range of from -5 V to -100 V is applied to the electroconductive substrate or the surface of the insulating substrate applied with the electroconductive treatment.

REFERENCES:
patent: 4401454 (1983-08-01), Matsuo et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4826778 (1989-05-01), Ishihara
Brodsky et al., IBM Tech. Disc. Bull., vol. 22, 8A Jan. 1980, pp. 3391-3392.

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