Housing for high-power semiconductor components with large diame

Details Housing for high-power semiconductor components with large diame Housing for high-power semiconductor components with large diame

1981-04-08

1984-01-17

Clawson, Jr., Joseph E.

357 79, H01L 2302

Patent

active

044266596

ABSTRACT:
A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

REFERENCES:
patent: 3995310 (1976-11-01), Koenig
patent: 4099201 (1978-07-01), Mueller
patent: 4141030 (1979-02-01), Eisele et al.
patent: 4162514 (1979-07-01), de Bruyne et al.
patent: 4274106 (1981-06-01), Ohdate

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