Hot-wall CVD method for forming a ferroelectric film

Details Hot-wall CVD method for forming a ferroelectric film Hot-wall CVD method for forming a ferroelectric film

1997-09-17

1998-10-27

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272552, 4272551, 4271263, C23C 1640

Patent

active

058275711

ABSTRACT:
The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers.

REFERENCES:
patent: 4625678 (1986-12-01), Shioya et al.
patent: 4792463 (1988-12-01), Okada et al.
patent: 5356477 (1994-10-01), Visser
patent: 5431958 (1995-07-01), Desu et al.
Si et al, J. Appl. Phys. 73(11), Jun. 1993 pp. 7910-7913.

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