Hot-pressed solid diffusion sources for phosphorus

Details Hot-pressed solid diffusion sources for phosphorus Hot-pressed solid diffusion sources for phosphorus

1974-12-04

1976-05-04

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

252950, 252951, 264 54, 106 69, H01L 744

Patent

active

039545253

ABSTRACT:
Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7, the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800.degree.C to about 1450.degree.C.

REFERENCES:
patent: 3314833 (1967-04-01), Arndt et al.
patent: 3540951 (1970-11-01), Pammer et al.
patent: 3751309 (1973-08-01), Derick et al.
patent: 3841927 (1974-10-01), Florence et al.
patent: 3849344 (1974-11-01), McMurtry et al.
patent: 3852086 (1974-12-01), Murata et al.
patent: B351348 (1975-01-01), Venkatu

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