Hot implantation at 1100.degree.-1300.degree. C. for forming non

Details Hot implantation at 1100.degree.-1300.degree. C. for forming non Hot implantation at 1100.degree.-1300.degree. C. for forming non

1978-11-13

1979-09-25

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21263

Patent

active

041689909

ABSTRACT:
A process is described for the particular control of process variables to produce any predetermined impurity concentration within a semiconductor body according to the relation ##EQU1## WHERE .differential.M/.differential.T IS THE FLUX OF IMPURITIES AT ANY TIME T, X IS THE DEPTH INTO THE SEMICONDUCTOR BODY, AND D(t) is the difficulty of the impurity as a function of time.

REFERENCES:
patent: 3717507 (1973-02-01), Abe
patent: 3745070 (1973-07-01), Yada et al.
patent: 4004950 (1977-01-01), Baruch et al.
MacDonald et al., " . . . Hot, P Implants in Si", Radiation Effects, 6 (1970), 223-235.
Namba et al., " . . . Diffusion in Ion Implanted Si", Rad. Effects, 6 (1970), 115-120.
Zandveld, "Crystal Damage . . . in Si", Solid St. Electronics, 21 (1978), 721.
Beanland et al., " . . . P Implanted at Elevated Temp.", Solid St. Electronics, 21 (1978), 357.

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