Hot filament chemical vapor deposition reactor

Details Hot filament chemical vapor deposition reactor Hot filament chemical vapor deposition reactor

1990-09-06

1992-11-03

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118725, 118728, C23C 1644, C23C 1648

Patent

active

051605449

ABSTRACT:
An improved hot filament chemical vapor deposition (HFCVD) reactor is disclosed comprising a gas dispersion system, a filament network and an apertured support plate for the substrate. The apertures in the support plate provide for counteracting the natural pressure and temperature gradients which arise within the reactor so that a uniform deposit or material can be coated over the entire surface of multiple small pieces simultaneously. Specifically, the apertured support plate substantially reduces the extent of radial (stagnation point) gas flow adjacent to the substrate which significantly improves coating uniformity.

REFERENCES:
Spear, J. Am. Ceram. Soc. 72(2), 171-91 (1989).

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