Hot electron transistors

Details Hot electron transistors Hot electron transistors

1987-12-17

1989-07-11

Larkins, William D.

357 4, 357 33, 357 61, H01L 2924, H01L 2968

Patent

active

048476668

ABSTRACT:
In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium and selenium in the host crystal or by superlattices of PbTe-CdTe. Variations described use either a tunneling barrier, graded barrier or camel diode barrier are used at the emitting junction. Other embodiments use a bismuth-antimony semiconductor alloy for one or more of the layers of the crystal.

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