Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-09-02
1999-11-02
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257 25, 257462, H01L 2906
Patent
active
059775572
ABSTRACT:
The present invention is related to a hot-electron photo transistor. By applying the combination of quantum dots or quantum wires with sizes, the wide spacer layers, and the blocking layers to the electron injecting barrier of the emitter, the wide range of infrared detection can be attained and the resolution of detected infrared wavelength can be increased. And by introducing the resonant tunneling quantum well structure to the base layer the selection, amplification and processing of the specific infrared frequency is possible and the reduction of the dark current is induced. Therefore, the present invention is applicable to ultra-high speed tunable infrared detectors and amplifiers, ultra-high speed switching and logic devices, high speed infrared logic devices with new features, new high-speed infrared logic devices which can reduce the number of logic devices.
REFERENCES:
patent: 5047810 (1991-09-01), Chemla et al.
patent: 5077593 (1991-12-01), Sato et al.
patent: 5198659 (1993-03-01), Smith et al.
patent: 5384469 (1995-01-01), Choi
Victor Ryzhii and Maxim Ershov; Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor; Feb. 1995; pp. 1257-1259, J. Appl. Phys. vol. 34.
V. Ryzhii and M. Ershov; Electron density modulation effect in a quantum-well infrared phototransistor; Jul. 1995; pp. 1214-1218, J. Appl. Phys. 78(2).
L.C. Lenchyshyn, H.C. Liu, M. Buchanan and Z.R. Wasilewski; Voltage-tuning in multi-color quantum well infrared photodector stacks; May 1996, pp. 8091-8097, Appl. Phys. 79(10).
Electronics & Telecommunications Research Institute
Tran Minh Loan
LandOfFree
Hot-electron photo transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hot-electron photo transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot-electron photo transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2138718