Hot electron injector Gunn device with anode heat sink

Details Hot electron injector Gunn device with anode heat sink Hot electron injector Gunn device with anode heat sink

1991-06-18

1993-10-05

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Intervalley transfer

257498, 257625, H01L 4702, H01L 2334

Patent

active

052508153

ABSTRACT:
A transferred electron effect device (1) has adjacent its cathode contact region (3) an injection zone (60) defining a potential barrier (P) for causing electrons to be emitted, under the influence of an electric field applied between the cathode and anode contact regions (3 and 4), into the active region (5) of the device with an energy comparable to that of a relatively high mass, low mobility satellite minimum (L) of the active region (5). The anode contact region (4), active region (5), injection zone (60) and cathode contact region (3) are grown sequentially, for example using molecular beam epitaxy, on a substrate which is then selectively removed to expose the anode contact region. A heat sink (70) is provided in thermal contact with the anode contact region (4). Providing the heat sink (70) in thermal contact with the anode contact region (4) rather than the cathode contact region (3) enables a significant increase in rf output power.

REFERENCES:
patent: 4189342 (1980-02-01), Kock
"Advances in Hot Electron Injector Gunn Diodes" H. Spooner et al GEC Journal of Research vol. 7, No. 1, 1989, pp. 34-45.
Sze, Physics of Semiconductor Devices, Chapter 11, pp. 637-678, 2nd Ed. (Wiley, N.Y., 1981).

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