Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-11-03
1999-05-25
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 29, 257 25, 257191, H01L 2906, H01L 2976
Patent
active
059071591
ABSTRACT:
The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a hot electron device which can improve the performance of the device such as the improvement in the current density and decrease in transition time by reducing the dispersion phenomenon by introducing indium arsenide layer having v-shape conduction band due to the graded composition as the base layer of hetero structure hot electron device (HET).
In addition, the present invention discloses a resonant tunneling hot electron device which is constructed by adding an emitter electron projection layer to the hot electron device of the present invention so that the Fermi energy and alignment can occur due to the stark shift and the projection of hot electron to the base region can occur through the Fermi energy and alignment.
REFERENCES:
patent: 5182233 (1993-01-01), Inoue
patent: 5773842 (1998-06-01), Kim et al.
W. L. Chen, et al., "InGaAs/AIAs/InGaAsP Resonant Tunneling Hot Electron Transistors Grown by Chemical Beam Epitaxy," IEEE Trans. Electron Devices, vol. 41, No. 2, Feb. 1994, pp. 155-161.
Kim Gyung Ock
Roh Dong Wan
Electronics and Telecommunications Research Institute
Guay John
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