Hot electron collector for a LDD transistor

Details Hot electron collector for a LDD transistor Hot electron collector for a LDD transistor

1989-07-03

1990-08-21

Larkins, William D.

357 2312, 357 53, 357 59, H01L 2978

Patent

active

049511009

ABSTRACT:
A lightly-doped drain (LDD) structure has conductive shield overlying the lightly-doped drain and source portions to collect and/or remove hot carriers which can otherwise cause instabilities such as gain degradation and threshold voltage shifts in short-channel MOS devices. The hot carriers eventually deteriorate the performance of the transistor to the point where the transistor provides insufficient performance. Thus, the lifetime of a transistor is affected by the degradation caused by the formation of hot carriers. The lifetime is increased by collecting the hot carriers in the conductive material over the lightly-doped source and drain.

REFERENCES:
patent: 4754320 (1988-06-01), Mizutani et al.
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 4808544 (1989-02-01), Matsui
patent: 4843023 (1989-06-01), Chiu et al.

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