Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Patent
1996-12-11
1998-04-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
257 52, 257485, 438570, H01L 2906
Patent
active
057448175
ABSTRACT:
A hot carrier transistor can be formed with semiconductor thin-film technology, for example hydrogenated amorphous silicon (a-Si:H) technology as used for large-area electronics devices. The emitter and collector regions (2 and 3) comprise hydrogenated amorphous semiconductor material (a-Si:H) adjoining an intermediate semiconductor-rich amorphous metal-semiconductor alloy layer (a-Si.sub.1-x M.sub.x :H) which provides the base region 1. The amorphous nature of the alloy layer (1) and its low percentage of metal M, e.g 5%, presents a range of quantum mechanical environments for the hot carriers (21) through the base region (1) with spatial variations of wavelength and effective mass (m*.sub.1, m*.sub.2). The current transport through this base region (1) will therefore be spatially self-selective in that the carriers (21) will tend to pass through those areas where there is a resonance between the wave function, the barrier heights (h1,h2) and the base width (x1,x2). Passage through semiconductor environments of the semiconductor-rich alloy layer (1) reduces quantum mechanical reflections at the base-collector barrier.
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Crane Sara W.
Fox John C.
U.S. Philips Corporation
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