Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1994-09-23
1997-08-19
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257589, 257590, 257592, 257593, H01L 2972
Patent
active
056591977
ABSTRACT:
The present invention provides a bipolar transistor in which a lightly doped n-type hot-carrier shield extends in an epitaxial layer adjacent from a poly-emitter to an extrinsic base. This hot-carrier shield minimizes performance impairment that would otherwise occur due to a hot-carrier effect. Key steps in the method of making the bipolar transistor include a differential thermal oxidation while the poly-emitter is covered with a nitride cap. After the nitride cap is removed, an n-type dopant is implanted. The unprotected poly emitter is heavily doped. The implant partially penetrates a relatively thin oxide growth, thereby forming the hot-carrier shield. Other areas, such as the extrinsic base, and a polycrystalline base extension are covered by a relatively thick oxide growth and are unaffected by the n-type implant.
REFERENCES:
patent: 4839305 (1989-06-01), Brighton
patent: 5198692 (1993-03-01), Momose
patent: 5342794 (1994-08-01), Wei
H. Honda et al., "Supression of Hot Carrier Effects by Laterally Graded Emitter (LGE) Structure in BiCMOS", IEDM Technical Digest, 1990, pp. 227-230.
Anderson Clifton L.
Prenty Mark V.
VLSI Technology Inc.
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