Hot carrier injection programming and negative gate voltage chan

Details Hot carrier injection programming and negative gate voltage chan Hot carrier injection programming and negative gate voltage chan

1998-07-28

2000-02-15

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, G11C 1300

Patent

active

060260289

ABSTRACT:
A flash electrical erasable programmable read only memory structure that utilizes hot carrier injection for programming and negative gate voltage to carry out channel erase operations. Characteristic of the memory structure includes a triple well structure having a P-well and an N-well located within a P-type substrate, wherein the N-well isolated the P-well from the P-type substrate. Therefore, an independently isolated triple well structure is established during memory erase operation.

REFERENCES:
patent: 5963479 (1999-10-01), Park et al.

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