Horizontal TRAM and method for the fabrication thereof

Details Horizontal TRAM and method for the fabrication thereof Horizontal TRAM and method for the fabrication thereof

2006-07-25

2006-07-25

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S279000, C438S589000

Reexamination Certificate

active

07081378

ABSTRACT:
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within the trench. An access transistor is formed on the semiconductor substrate. An interconnect is formed between the thyristor and the access transistor.

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