Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-02-27
2007-02-27
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257SE29221
Reexamination Certificate
active
11422560
ABSTRACT:
An integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within the trench. An access transistor is formed on the semiconductor substrate. An interconnect is formed between the thyristor and the access transistor.
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Chan Tze Ho Simon
Li Weining
Yelehanka Pradeep Ramachandramurthy
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
Wilczewski M.
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