Horizontal structure thin film transistor

Details Horizontal structure thin film transistor Horizontal structure thin film transistor

1988-12-14

1990-01-30

James, Andrew J.

357 35, 357 49, 357 59, H01L 2904, H01L 2712, H01L 4902

Patent

active

048976989

ABSTRACT:
A horizontal structure transistor is fabricated in a shallow epitaxial island which is completely surrounded by an insulator, such as oxide. The transistor has base and emitter regions which are diffused into the island from the same mask so that the base width is controllable and remains constant with respect to the emitter. A polysilicon base contact rests on top of the island and is isolated from the emitter and collector regions by an oxide layer. The horizontal structure transistor can easily be fabricated to include complementary bipolar transistors and complementary IGFET devices on the same substrate.

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