Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Reexamination Certificate
2006-05-02
2006-05-02
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
C257S197000, C257S557000, C257S577000
Reexamination Certificate
active
07038249
ABSTRACT:
A bipolar transistor structure for use in integrated circuits where the active device is processed on the sidewall of an n-hill so that the surface footprint does not depend on the desired area of active device region (emitter area). This structure, which is referred to as a Horizontal Current Bipolar Transistor (HCBT), consumes a smaller area of chip surface than conventional devices, thereby enabling higher packing density of devices and/or the reduction of integrated circuit die size. The device is fabricated with a single polysilicon layer, without an epitaxial process, without demanding trench isolation technology, and with reduced thermal budget. Fabrication requires fewer etching processes and thermal oxidations than in conventional devices.
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Biljanovic Petar
Suligoj Tomislav
Wang Kang L.
O'Banion John P.
Quach T. N.
The Regents of the University of California
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