Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-04-10
1995-06-20
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257237, 257240, 257241, 377 60, 377 62, H01L 2978
Patent
active
054263182
ABSTRACT:
A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by multiple, overlapping gate structures. Signal charges are detected or read out from the floating diffusion through an amplifier/inverter circuit. Periodically, the voltage of the floating diffusion is established to a reference level by application of a reset signal to a multiple reset gate structure, which results in charges in the floating diffusion being transferred to a reset drain. Noise induced by the reset operation is lessened on average due to the multiple reset gate structure.
REFERENCES:
patent: 3896485 (1975-07-01), Early
patent: 4993053 (1991-02-01), Itoh et al.
Charge-coupled Devices--An Overview, by Walter F. Kosonocky, RCA Laboratories, Princeton, New Jersey--Reprinted with permission from 1974 Western Electron Show and Conv. Tech. Papers, vol. 18, Sep. 10-13, 1974, pp. 2/1-2/20.
Noise Sources in Charge-coupled Devices, by J. E. Carnes and W. F. Kosonocky, RCA Laboratories, Princeton, New Jersey --Reprinted with permission from RCA Rev. vol. 33, pp. 327-343, Jun. 1972.
The ABC's of CCDs, by Walter F. Kosonocky and Donald J. Sauer--Technical Staff--RCA Laboratories, Princeton, New Jersey--Reprinted with permission from Electron. Des., vol. 23, pp. 58-63, Apr. 12, 1975.
Goldstar Electron Co. Ltd.
Loudermilk Alan R.
Ngo Ngan
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