Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-06-11
1995-04-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257248, H01L 2978
Patent
active
054061016
ABSTRACT:
A signal charge transfer device. The device comprises a well of a first conductivity type, a channel region of a second conductivity type formed on the well, and a gate insulation film formed on the channel region. A plurality of equally spaced first charge transfer electrodes of the second conductivity type are formed on the gate insulation film. A plurality of second charge transfer electrodes of the first conductivity type are formed between the plurality of first charge transfer electrodes. An insulation film electrically isolates the plurality of first charge transfer electrodes from the plurality of second charge transfer electrodes.
REFERENCES:
patent: 3943545 (1976-03-01), Kim
patent: 4001861 (1977-01-01), Carnes
patent: 4132903 (1979-01-01), Graham
patent: 4206372 (1980-06-01), Levine
Goldstar Electron Co. Ltd.
Ngo Ngan V.
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