Horizontal charge coupled device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257236, 257248, H01L 2978

Patent

active

054061016

ABSTRACT:
A signal charge transfer device. The device comprises a well of a first conductivity type, a channel region of a second conductivity type formed on the well, and a gate insulation film formed on the channel region. A plurality of equally spaced first charge transfer electrodes of the second conductivity type are formed on the gate insulation film. A plurality of second charge transfer electrodes of the first conductivity type are formed between the plurality of first charge transfer electrodes. An insulation film electrically isolates the plurality of first charge transfer electrodes from the plurality of second charge transfer electrodes.

REFERENCES:
patent: 3943545 (1976-03-01), Kim
patent: 4001861 (1977-01-01), Carnes
patent: 4132903 (1979-01-01), Graham
patent: 4206372 (1980-06-01), Levine

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