Horizontal chalcogenide element defined by a pad for use in...

Details Horizontal chalcogenide element defined by a pad for use in... Horizontal chalcogenide element defined by a pad for use in...

2006-05-02

2006-05-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C257S040000

Reexamination Certificate

active

07038230

ABSTRACT:
A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or other semiconductor devices.

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