Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1993-12-06
1996-02-06
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 18, 117214, C30B 3500
Patent
active
054889243
ABSTRACT:
A hopper is sized and shaped for reception in a crystal pulling apparatus for use in charging semiconductor source material to a crucible of the crystal pulling apparatus. The crystal pulling apparatus includes a pulling chamber, a growth chamber, an isolation valve operable to seal the growth chamber from the pulling chamber, and a crucible in the growth chamber. The hopper includes a bin constructed for containing a quantity of semiconductor source material. The bin has an opening in its bottom for delivery of the semiconductor source material from the bin to the crucible. A stopper constructed for closing the opening to prohibit passage of semiconductor source material from the bin is moved by a stopper actuating mechanism between a closed position and an open position. A connector attached to the hopper is constructed for temporarily mounting the hopper in the crystal pulling apparatus.
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Horvath Julian
Jones Dennis G.
Polett Jane E.
Breneman R. Bruce
Garrett Felisa
MEMC Electronic Materials
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