Homogenous silicon nitride sintered body

Details Homogenous silicon nitride sintered body Homogenous silicon nitride sintered body

1990-01-04

1991-03-26

Group, Karl

Compositions: ceramic

Ceramic compositions

Refractory

501 98, C04B 3558

Patent

active

050029070

ABSTRACT:
A homogeneous Si.sub.3 N.sub.4 sintered body is produced having a proportion of a grain boundary crystalline phase to the whole grain boundary of 50% or less, maximum pore diameter of 10 .mu.m or less and a porosity of 0.5% or less. A process for manufacturing each an Si.sub.3 N.sub.4 sintered body is, in conventional processes wherein a starting material for Si.sub.3 N.sub.4 is mixed with a sintering aid, pulverized, granulated, then molded and subsequently fired, characterized in that a temperature lowering rate from a firing temperature to 1,000.degree. C. is made to be 30.degree. C./min. Another process of the invention is, in the above conventional process, characterized in that Si.sub.3 N.sub.4 containing at least 90% of .alpha.-Si.sub.3 N.sub.4 as a starting material and a sintering aid, both having an average grain diameter of 1 .mu.m or less, are used, the granulated powder is once forcedly dried and then, if required, water is added, before the molding and firing.

REFERENCES:
patent: 4628039 (1986-12-01), Mizutani et al.
patent: 4699890 (1987-10-01), Matsui
patent: 4746636 (1988-05-01), Yokohama
patent: 4801565 (1989-01-01), Matsui
patent: 4818733 (1989-04-01), Shirai et al.
patent: 4830991 (1989-05-01), Matsui

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