Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-08-06
1993-12-07
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257230, 257241, 257249, 377 57, 377 60, 377 62, H01L 2978, G11C 1928
Patent
active
052685837
ABSTRACT:
An exploiting or readout circuit for a linear or matrix type photodetector array is of the multiplex type, such as a charge-coupled device (CCD). The exploiting circuit has a number of input stages corresponding to the number of photodetectors or similar photosites, and the gains of the input stages are established as a function of the fields of view of their associated photodetectors. In one embodiment the input stages each comprise a storage device formed of a first and a second storage electrode separated by a dividing electrode, the storage electrodes having respective surface areas selected in a relation that varies as a function of solid angle field of view of the respective photodetector. In another embodiment the input stage can include an OpAmp with a negative feedback capacitor whose value is selected as a function of the viewing solid angle of the respective photodetector.
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IEEE Transactions on Electron Devices, vol. ED-29, No. 1, (1982) pp. 3-13; "Hybrid Infrared Focal-Plane Arrays".
Hille Rolf
Saadat Mahshid
Sofradir - Societe Francaise de Detecteurs Infrarouges
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